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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10737356 B1

PDFFull Text
Date of Patent:
Aug. 11, 2020

Filed:

Jun. 14, 2016

Bonding wire for semiconductor device

Applicants:

Nippon Micrometal Corporation, Saitama, JP;

Nippon Steel Chemical & Material Co., Ltd., Tokyo, JP;

Inventors:

Takashi Yamada, Saitama, JP;

Daizo Oda, Saitama, JP;

Teruo Haibara, Saitama, JP;

Ryo Oishi, Saitama, JP;

Kazuyuki Saito, Saitama, JP;

Tomohiro Uno, Tokyo, JP;

Assignees:

NIPPON MICROMETAL CORPORATION, Saitama, JP;

NIPPON STEEL CHEMICAL & MATERIAL CO., LTD., Tokyo, JP;

Attorney:

McDermott Will & Emery LLP

Primary Examiner:

Kiley S Stoner

Int. Cl.
CPC ...
B23K 35/00 (2006.01); B23K 35/02 (2006.01); B32B 15/01 (2006.01); B32B 15/00 (2006.01); C23C 30/00 (2006.01); C22C 9/00 (2006.01); B23K 35/30 (2006.01); C22C 9/04 (2006.01); C22C 9/06 (2006.01); H01L 23/00 (2006.01); C22C 5/04 (2006.01); B23K 101/40 (2006.01);
U.S. Cl.
CPC ...
B23K 35/0227 (2013.01); B23K 35/302 (2013.01); B23K 35/3013 (2013.01); B32B 15/00 (2013.01); B32B 15/01 (2013.01); B32B 15/018 (2013.01); C22C 5/04 (2013.01); C22C 9/00 (2013.01); C22C 9/04 (2013.01); C22C 9/06 (2013.01); C23C 30/00 (2013.01); C23C 30/005 (2013.01); H01L 24/43 (2013.01); H01L 24/45 (2013.01); H01L 24/48 (2013.01); B23K 2101/40 (2018.08); H01L 24/05 (2013.01); H01L 2224/05624 (2013.01); H01L 2224/43 (2013.01); H01L 2224/4312 (2013.01); H01L 2224/4321 (2013.01); H01L 2224/4382 (2013.01); H01L 2224/43125 (2013.01); H01L 2224/43848 (2013.01); H01L 2224/43986 (2013.01); H01L 2224/45 (2013.01); H01L 2224/45005 (2013.01); H01L 2224/4512 (2013.01); H01L 2224/45015 (2013.01); H01L 2224/45105 (2013.01); H01L 2224/45109 (2013.01); H01L 2224/45111 (2013.01); H01L 2224/45113 (2013.01); H01L 2224/45118 (2013.01); H01L 2224/45147 (2013.01); H01L 2224/45155 (2013.01); H01L 2224/45169 (2013.01); H01L 2224/45173 (2013.01); H01L 2224/45178 (2013.01); H01L 2224/45541 (2013.01); H01L 2224/45565 (2013.01); H01L 2224/45572 (2013.01); H01L 2224/45644 (2013.01); H01L 2224/45664 (2013.01); H01L 2224/4845 (2013.01); H01L 2224/48227 (2013.01); H01L 2224/48247 (2013.01); H01L 2224/48463 (2013.01); H01L 2224/48824 (2013.01); H01L 2224/78 (2013.01); H01L 2224/78251 (2013.01); H01L 2224/85 (2013.01); H01L 2224/85065 (2013.01); H01L 2224/85075 (2013.01); H01L 2224/85203 (2013.01); H01L 2224/85444 (2013.01); H01L 2224/85464 (2013.01); H01L 2924/0102 (2013.01); H01L 2924/01005 (2013.01); H01L 2924/01012 (2013.01); H01L 2924/01015 (2013.01); H01L 2924/01032 (2013.01); H01L 2924/01033 (2013.01); H01L 2924/01034 (2013.01); H01L 2924/01052 (2013.01); H01L 2924/01057 (2013.01); H01L 2924/0665 (2013.01); H01L 2924/0705 (2013.01); H01L 2924/10253 (2013.01); H01L 2924/186 (2013.01); Y10T 428/1291 (2015.01); Y10T 428/12868 (2015.01); Y10T 428/12875 (2015.01); Y10T 428/12882 (2015.01); Y10T 428/12889 (2015.01); Y10T 428/12896 (2015.01); Y10T 428/12903 (2015.01); Y10T 428/2495 (2015.01); Y10T 428/24967 (2015.01); Y10T 428/265 (2015.01);
Abstract

A bonding wire for a semiconductor device, characterized in that the bonding wire includes a Cu alloy core material and a Pd coating layer formed on a surface of the Cu alloy core material, the bonding wire contains an element that provides bonding reliability in a high-temperature environment, and a strength ratio defined by the following Equation (1) is 1.1 to 1.6:Strength ratio=ultimate strength/0.2% offset yield strength.  (1)

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