The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 30, 2020
Filed:
Oct. 18, 2018
Applied Materials, Inc., Santa Clara, CA (US);
Priyadarshi Panda, Newark, CA (US);
Jianxin Lei, Fremont, CA (US);
Wenting Hou, San Jose, CA (US);
Mihaela Balseanu, Sunnyvale, CA (US);
Ning Li, San Jose, CA (US);
Sanjay Natarajan, Portland, OR (US);
Gill Yong Lee, San Jose, CA (US);
In Seok Hwang, Pleasanton, CA (US);
Nobuyuki Sasaki, Santa Clara, CA (US);
Sung-Kwan Kang, San Jose, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
Memory devices and methods of forming memory devices are described. The memory devices comprise a substrate with at least one film stack. The film stack comprises a polysilicon layer on the substrate; a bit line metal layer on the polysilicon layer; a cap layer on the bit line metal layer; and a hardmask on the cap layer. The memory device of some embodiments includes an optional barrier metal layer on the polysilicon layer and the bit line metal layer is on the barrier metal layer. Methods of forming electronic devices are described where one or more patterns are transferred through the films of the film stack to provide the bit line of a memory device.