The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 23, 2020
Filed:
Apr. 18, 2019
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Shih-Ya Huang, Hsinchu, TW;
Chung-Hao Tsai, Huatan Township, TW;
Chuei-Tang Wang, Taichung, TW;
Chen-Hua Yu, Hsinchu, TW;
Chih-Yuan Chang, Hsinchu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Abstract
A method includes embedding a die in a molding material; forming a first dielectric layer over the molding material and the die; forming a conductive line over an upper surface of the first dielectric layer facing away from the die; and forming a second dielectric layer over the first dielectric layer and the conductive line. The method further includes forming a first trench opening extending through the first dielectric layer or the second dielectric layer, where a longitudinal axis of the first trench is parallel with a longitudinal axis of the conductive line, and where no electrically conductive feature is exposed at a bottom of the first trench opening; and filling the first trench opening with an electrically conductive material to form a first ground trench.