The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 16, 2020

Filed:

May. 16, 2014
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;

Inventors:

Ming-Chin Chien, Hsinchu, TW;

Jui-Ching Wu, Hsinchu, TW;

Shu-Hao Chang, Taipei, TW;

Shang-Chieh Chien, New Taipei, TW;

Jen-Yang Chung, Hsin-Chu, TW;

Kuo-Chang Kau, Miaoli County, TW;

Jeng-Horng Chen, Hsin-Chu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 21/311 (2006.01); H01L 21/033 (2006.01); H01L 21/306 (2006.01);
U.S. Cl.
CPC ...
H01L 21/31144 (2013.01); H01L 21/0337 (2013.01); H01L 21/30625 (2013.01);
Abstract

A method of fabricating a semiconductor integrated circuit (IC) is disclosed. An inverse mask is provided. A sacrificial layer is deposited over a substrate. A patterned photoresist layer is formed over the sacrificial layer using the inverse mask. The sacrificial layer is then etched through the patterned photoresist layer to form a patterned sacrificial layer. A hard mask layer is deposited over the patterned sacrificial layer. The patterned sacrificial layer is then removed to form a second pattern on the hard mask layer.


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