The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 09, 2020

Filed:

Sep. 10, 2018
Applicant:

Yangtze Memory Technologies Co., Ltd., Wuhan, Hubei, CN;

Inventors:

Zhenyu Lu, Hubei, CN;

Jun Chen, Hubei, CN;

Xiaowang Dai, Hubei, CN;

Jifeng Zhu, Hubei, CN;

Qian Tao, Hubei, CN;

Yu Ru Huang, Hubei, CN;

Si Ping Hu, Hubei, CN;

Lan Yao, Hubei, CN;

Li Hong Xiao, Hubei, CN;

A Man Zheng, Hubei, CN;

Kun Bao, Hubei, CN;

Haohao Yang, Hubei, CN;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/11524 (2017.01); H01L 27/11582 (2017.01); H01L 21/027 (2006.01); H01L 27/1157 (2017.01); H01L 27/11575 (2017.01); H01L 21/311 (2006.01); H01L 27/11529 (2017.01);
U.S. Cl.
CPC ...
H01L 27/11524 (2013.01); H01L 21/0273 (2013.01); H01L 21/31144 (2013.01); H01L 27/1157 (2013.01); H01L 27/11529 (2013.01); H01L 27/11575 (2013.01); H01L 27/11582 (2013.01);
Abstract

A semiconductor structure is disclosed. The semiconductor structure includes a staircase structure disposed over a substrate. The staircase structure includes a plurality of layer stacks, where each layer stack is made of a first material layer over a portion of a second material layer. The staircase structure further includes a plurality of landing pads, where each landing pad is disposed over another portion of the second material layer of a respective layer stack.


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