The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 02, 2020
Filed:
Sep. 10, 2018
Yangtze Memory Technologies Co., Ltd., Wuhan, Hubei, CN;
Jifeng Zhu, Hubei, CN;
Zhenyu Lu, Hubei, CN;
Jun Chen, Hubei, CN;
Si Ping Hu, Hubei, CN;
Xiaowang Dai, Hubei, CN;
Lan Yao, Hubei, CN;
Li Hong Xiao, Hubei, CN;
A Man Zheng, Hubei, CN;
Kun Bao, Hubei, CN;
Haohao Yang, Hubei, CN;
Yangtze Memory Technologies Co., Ltd., Wuhan, Hubei, CN;
Abstract
Embodiments of semiconductor structures including word line contact structures for three-dimensional memory devices and fabrication methods for forming word line contact structures are disclosed. The semiconductor structures include a staircase structure having a plurality of steps, and each step includes a conductive layer disposed over a dielectric layer. The semiconductor structures further include a barrier layer disposed over a portion of the conductive layer of each step. The semiconductor structures also include an etch-stop layer disposed on the barrier layer and an insulating layer disposed on the etch-stop layer. The semiconductor structures also include a plurality of conductive structures formed in the insulating layer and each conductive structure is formed on the conductive layer of each step.