The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 02, 2020
Filed:
Mar. 31, 2011
Applicants:
Emad Aqad, Shrewsbury, MA (US);
Cong Liu, Shrewsbury, MA (US);
Cheng-bai Xu, Southboro, MA (US);
Mingqi LI, Shrewsbury, MA (US);
Inventors:
Emad Aqad, Shrewsbury, MA (US);
Cong Liu, Shrewsbury, MA (US);
Cheng-Bai Xu, Southboro, MA (US);
Mingqi Li, Shrewsbury, MA (US);
Assignee:
Rohm and Haas Electronic Materials LLC, Marlborough, MA (US);
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G03F 7/039 (2006.01); G03F 7/20 (2006.01); G03F 7/004 (2006.01);
U.S. Cl.
CPC ...
G03F 7/0392 (2013.01); G03F 7/0045 (2013.01); G03F 7/0046 (2013.01); G03F 7/0397 (2013.01); G03F 7/2041 (2013.01);
Abstract
New polymers are provided comprising (i) one or more covalently linked photoacid generator moieties and (ii) one or more photoacid-labile groups, wherein the one or more photoacid generator moieties are a component of one or more of the photoacid-labile groups. Preferred polymers of the invention are suitable for use in photoresists imaged at short wavelengths such as sub-200 nm, particularly 193 nm.