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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10651279 B1

PDFFull Text
Date of Patent:
May. 12, 2020

Filed:

Dec. 20, 2018

Semiconductor interconnect structure having graphene-capped metal interconnects

Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Shin-Yi Yang, New Taipei, TW;

Ching-Fu Yeh, Hsinchu, TW;

Ming-Han Lee, Taipei, TW;

Shau-Lin Shue, Hsinchu, TW;

Assignee:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Attorney:

Sterne, Kessler, Goldstein & Fox P.L.L.C.

Primary Examiner:

Thao P Le

Int. Cl.
CPC ...
H01L 29/16 (2006.01); H01L 23/522 (2006.01); H01L 21/768 (2006.01); H01L 23/532 (2006.01);
U.S. Cl.
CPC ...
H01L 29/1606 (2013.01); H01L 21/76823 (2013.01); H01L 21/76843 (2013.01); H01L 21/76864 (2013.01); H01L 21/76877 (2013.01); H01L 21/76879 (2013.01); H01L 21/76883 (2013.01); H01L 23/5226 (2013.01); H01L 23/53209 (2013.01); H01L 23/53223 (2013.01); H01L 23/53238 (2013.01); H01L 23/53252 (2013.01); H01L 23/53266 (2013.01); H01L 23/53295 (2013.01); H01L 21/76807 (2013.01); H01L 23/53214 (2013.01); H01L 23/53228 (2013.01); H01L 23/53242 (2013.01); H01L 23/53257 (2013.01); H01L 2221/1063 (2013.01);
Abstract

The present disclosure relates to a semiconductor device and a manufacturing method, and more particularly to a semiconductor interconnect structure incorporating a graphed barrier layer. The present disclosure provides a method of forming a graphed barrier layer by thermally annealing amorphous carbon layers on metal catalyst surfaces. The thickness of the graphed barrier layers can be selected by varying the thickness of the amorphous carbon layer.

Find Patent Forward Citations

Yang, Shin-Yi. (2020). Semiconductor interconnect structure having graphene-capped metal interconnects (U.S. Patent No. 10651279). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10651279

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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