The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 28, 2020
Filed:
Mar. 29, 2018
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Chun-Wei Hsu, Hsinchu, TW;
Ling-Fu Nieh, Taipei, TW;
Pinlei Edmund Chu, Hsinchu, TW;
Chi-Jen Liu, Taipei, TW;
Yi-Sheng Lin, Taichung, TW;
Ting-Hsun Chang, Kaohsiung, TW;
Chia-Wei Ho, Kaohsiung, TW;
Liang-Guang Chen, Hsinchu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Abstract
Semiconductor devices and methods of forming are provided. In some embodiments the method includes forming a dielectric layer over a substrate and patterning the dielectric layer to form a first recess. The method may also include depositing a first layer in the first recess and depositing a second layer over the first layer, the second layer being different than the first layer. The method may also include performing a first chemical mechanical polish (CMP) process on the second layer using a first oxidizer and performing a second CMP process on remaining portions of the second layer and the first layer using the first oxidizer. The method may also include forming a first conductive element over the remaining portions of the first layer after the second CMP polish is performed.