The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 03, 2020
Filed:
Nov. 12, 2014
Applied Materials, Inc., Santa Clara, CA (US);
Zheng John Ye, Santa Clara, CA (US);
Ganesh Balasubramanian, Sunnyvale, CA (US);
Thuy Britcher, San Jose, CA (US);
Jay D. Pinson, II, San Jose, CA (US);
Hiroji Hanawa, Sunnyvale, CA (US);
Juan Carlos Rocha-Alvarez, San Carlos, CA (US);
Kwangduk Douglas Lee, Redwood City, CA (US);
Martin Jay Seamons, San Jose, CA (US);
Bok Hoen Kim, San Jose, CA (US);
Sungwon Ha, Palo Alto, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
A system for modifying the uniformity pattern of a thin film deposited in a plasma processing chamber includes a single radio-frequency (RF) power source that is coupled to multiple points on the discharge electrode of the plasma processing chamber. Positioning of the multiple coupling points, a power distribution between the multiple coupling points, or a combination of both are selected to at least partially compensate for a consistent non-uniformity pattern of thin films produced by the chamber. The power distribution between the multiple coupling points may be produced by an appropriate RF phase difference between the RF power applied at each of the multiple coupling points.