The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 14, 2020

Filed:

Nov. 02, 2016
Applicant:

Nova Measuring Instruments, Inc., Santa Clara, CA (US);

Inventors:

Wei Ti Lee, San Jose, CA (US);

Heath Pois, Fremont, CA (US);

Mark Klare, Poughkeepsie, NY (US);

Cornel Bozdog, San Jose, CA (US);

Assignee:

NOVA MEASURING INSTRUMENTS, INC., Santa Clara, CA (US);

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01N 23/227 (2018.01); G01N 23/223 (2006.01); G01N 23/22 (2018.01); G01N 23/2273 (2018.01); G01B 11/06 (2006.01); G01B 15/02 (2006.01); G01N 23/2208 (2018.01);
U.S. Cl.
CPC ...
G01N 23/2273 (2013.01); G01B 11/06 (2013.01); G01B 15/02 (2013.01); G01N 23/223 (2013.01); G01N 23/2208 (2013.01); G01N 2223/305 (2013.01); G01N 2223/61 (2013.01); G01N 2223/633 (2013.01);
Abstract

Determining a property of a layer of an integrated circuit (IC), the layer being formed over an underlayer, is implemented by performing the steps of: irradiating the IC to thereby eject electrons from the IC; collecting electrons emitted from the IC and determining the kinetic energy of the emitted electrons to thereby calculate emission intensity of electrons emitted from the layer and electrons emitted from the underlayer calculating a ratio of the emission intensity of electrons emitted from the layer and electrons emitted from the underlayer; and using the ratio to determine material composition or thickness of the layer. The steps of irradiating IC and collecting electrons may be performed using x-ray photoelectron spectroscopy (XPS) or x-ray fluorescence spectroscopy (XRF).


Find Patent Forward Citations

Lee, Wei. (2020). Method and system for non-destructive metrology of thin layers (U.S. Patent No. 10533961). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10533961

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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