The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 24, 2019
Filed:
Jul. 26, 2018
Yangtze Memory Technologies Co., Ltd., Wuhan, Hubei, CN;
Qian Tao, Hubei, CN;
Yushi Hu, Hubei, CN;
Zhenyu Lu, Hubei, CN;
Li Hong Xiao, Hubei, CN;
Jun Chen, Hubei, CN;
Xiaowang Dai, Hubei, CN;
Jin Lyu, Hubei, CN;
Jifeng Zhu, Hubei, CN;
Jin Wen Dong, Hubei, CN;
Lan Yao, Hubei, CN;
Yangtze Memory Technologies Co., Ltd., Wuhan, Hubei, CN;
Abstract
A method for forming a channel hole structure of a 3D memory device is disclosed. The method includes: forming a first alternating dielectric stack and a first insulating layer on a substrate; forming a first channel structure in a first channel hole penetrating the first insulating layer and the first alternating dielectric stack; forming a sacrificial inter-deck plug in the first insulating layer; forming a second alternating dielectric stack on the sacrificial inter-deck plug; forming a second channel hole penetrating the second alternating dielectric stack and expose a portion of the sacrificial inter-deck plug; removing the sacrificial inter-deck plug to form a cavity; and forming an inter-deck channel plug in the cavity and a second channel structure in the second channel hole, the inter-deck channel plug contacts the first channel structure and the second channel structure.