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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10510539 B1

PDFFull Text
Date of Patent:
Dec. 17, 2019

Filed:

Nov. 28, 2016

Fin field effect transistor (finfet) device with controlled end-to-end critical dimension and method for forming the same

Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;

Inventors:

Chang-Yin Chen, Taipei, TW;

Tung-Wen Cheng, New Taipei, TW;

Che-Cheng Chang, New Taipei, TW;

Chun-Lung Ni, Tainan, TW;

Jr-Jung Lin, Hsin-Chu, TW;

Chih-Han Lin, Hsin-Chu, TW;

Assignee:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;

Attorney:

Slater Matsil, LLP

Primary Examiner:

Peter Bradford

Int. Cl.
CPC ...
H01L 21/033 (2006.01); H01L 27/092 (2006.01); H01L 27/088 (2006.01); H01L 29/06 (2006.01); H01L 29/51 (2006.01); H01L 29/49 (2006.01); H01L 21/8238 (2006.01); H01L 21/8234 (2006.01); H01L 21/02 (2006.01); H01L 21/311 (2006.01); H01L 21/3213 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0338 (2013.01); H01L 21/02532 (2013.01); H01L 21/02595 (2013.01); H01L 21/0332 (2013.01); H01L 21/0335 (2013.01); H01L 21/0337 (2013.01); H01L 21/31144 (2013.01); H01L 21/32139 (2013.01); H01L 21/823431 (2013.01); H01L 21/823821 (2013.01); H01L 21/823828 (2013.01); H01L 21/823878 (2013.01); H01L 27/0886 (2013.01); H01L 27/0924 (2013.01); H01L 29/0653 (2013.01); H01L 29/495 (2013.01); H01L 29/4966 (2013.01); H01L 29/517 (2013.01); H01L 29/66545 (2013.01); H01L 21/0206 (2013.01); H01L 21/0212 (2013.01); H01L 21/02274 (2013.01);
Abstract

A method for forming a fin field effect transistor (FinFET) device structure is provided. The FinFET device structure includes a substrate and a first fin structure and a second fin structure extending above the substrate. The FinFET device structure also includes a first transistor formed on the first fin structure and a second transistor formed on the second fin structure. The FinFET device structure further includes an inter-layer dielectric (ILD) structure formed in an end-to-end gap between the first transistor and the second transistor, and the end-to-end gap has a width in a range from about 20 nm to about 40 nm.

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