The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 29, 2019
Filed:
Jun. 07, 2016
Tokyo Electron Limited, Tokyo, JP;
Central Glass Co., Ltd., Ube-shi, Yamaguchi, JP;
Jun Lin, Nirasaki, JP;
Koji Takeya, Nirasaki, JP;
Shinichi Kawaguchi, Nirasaki, JP;
Mitsuhiro Tachibana, Nirasaki, JP;
Akifumi Yao, Ube, JP;
Kunihiro Yamauchi, Ube, JP;
TOKYO ELECTRON LIMITED, Tokyo, JP;
CENTRAL GLASS CO., LTD., Yamaguchi, JP;
Abstract
A technique capable of removing a natural oxide film formed on a surface of a semiconductor layer which contains a compound of indium and an element other than indium as a main ingredient, without making a temperature of the semiconductor layer relatively high. The technique includes supplying a first etching gas which is β-diketone to the semiconductor layer and heating the semiconductor layer to remove an oxide of the indium constituting the natural oxide film; and supplying a second etching gas to the semiconductor layer and heating the semiconductor layer to remove an oxide of the element constituting the natural oxide film. By using the first etching gas, it is possible to remove the indium oxide even if the temperature of the semiconductor layer is relatively low. This eliminates the need to increase the temperature to a relatively high level when removing the natural oxide film.