The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 17, 2019

Filed:

May. 19, 2016
Applicants:

Nippon Micrometal Corporation, Saitama, JP;

Nippon Steel & Sumikin Materials Co., Ltd., Tokyo, JP;

Inventors:

Takashi Yamada, Saitama, JP;

Daizo Oda, Saitama, JP;

Teruo Haibara, Saitama, JP;

Ryo Oishi, Saitama, JP;

Kazuyuki Saito, Saitama, JP;

Tomohiro Uno, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B23K 35/02 (2006.01); H01L 23/00 (2006.01); C22C 9/04 (2006.01); C22C 9/06 (2006.01); B23K 35/30 (2006.01); B32B 15/01 (2006.01); B32B 15/00 (2006.01); C23C 30/00 (2006.01); C22C 9/00 (2006.01); C22C 5/04 (2006.01); B23K 101/40 (2006.01);
U.S. Cl.
CPC ...
B23K 35/0227 (2013.01); B23K 35/302 (2013.01); B23K 35/3013 (2013.01); B32B 15/00 (2013.01); B32B 15/01 (2013.01); B32B 15/018 (2013.01); C22C 5/04 (2013.01); C22C 9/00 (2013.01); C22C 9/04 (2013.01); C22C 9/06 (2013.01); C23C 30/00 (2013.01); C23C 30/005 (2013.01); H01L 24/43 (2013.01); H01L 24/45 (2013.01); H01L 24/48 (2013.01); B23K 2101/40 (2018.08); H01L 24/05 (2013.01); H01L 2224/05624 (2013.01); H01L 2224/43 (2013.01); H01L 2224/4312 (2013.01); H01L 2224/4321 (2013.01); H01L 2224/4382 (2013.01); H01L 2224/43125 (2013.01); H01L 2224/43848 (2013.01); H01L 2224/43986 (2013.01); H01L 2224/45 (2013.01); H01L 2224/45005 (2013.01); H01L 2224/4512 (2013.01); H01L 2224/45015 (2013.01); H01L 2224/45105 (2013.01); H01L 2224/45109 (2013.01); H01L 2224/45111 (2013.01); H01L 2224/45113 (2013.01); H01L 2224/45118 (2013.01); H01L 2224/45147 (2013.01); H01L 2224/45155 (2013.01); H01L 2224/45169 (2013.01); H01L 2224/45173 (2013.01); H01L 2224/45178 (2013.01); H01L 2224/45541 (2013.01); H01L 2224/45565 (2013.01); H01L 2224/45572 (2013.01); H01L 2224/45644 (2013.01); H01L 2224/45664 (2013.01); H01L 2224/4845 (2013.01); H01L 2224/48227 (2013.01); H01L 2224/48247 (2013.01); H01L 2224/48463 (2013.01); H01L 2224/48824 (2013.01); H01L 2224/78 (2013.01); H01L 2224/78251 (2013.01); H01L 2224/85 (2013.01); H01L 2224/85065 (2013.01); H01L 2224/85075 (2013.01); H01L 2224/85203 (2013.01); H01L 2224/85444 (2013.01); H01L 2224/85464 (2013.01); H01L 2924/0102 (2013.01); H01L 2924/01005 (2013.01); H01L 2924/01012 (2013.01); H01L 2924/01015 (2013.01); H01L 2924/01032 (2013.01); H01L 2924/01033 (2013.01); H01L 2924/01034 (2013.01); H01L 2924/01052 (2013.01); H01L 2924/01057 (2013.01); H01L 2924/0665 (2013.01); H01L 2924/0705 (2013.01); H01L 2924/10253 (2013.01); H01L 2924/186 (2013.01); Y10T 428/1291 (2015.01); Y10T 428/12868 (2015.01); Y10T 428/12875 (2015.01); Y10T 428/12882 (2015.01); Y10T 428/12889 (2015.01); Y10T 428/12896 (2015.01); Y10T 428/12903 (2015.01); Y10T 428/2495 (2015.01); Y10T 428/24967 (2015.01); Y10T 428/265 (2015.01);
Abstract

A bonding wire for a semiconductor device includes a Cu alloy core material and a Pd coating layer formed on a surface thereof. Containing an element that provides bonding reliability in a high-temperature environment improves the bonding reliability of the ball bonded part in high temperature. Furthermore, making an orientation proportion of a crystal orientation <100> angled at 15 degrees or less to a wire longitudinal direction among crystal orientations in the wire longitudinal direction 30% or more when measuring crystal orientations on a cross-section of the core material in a direction perpendicular to a wire axis of the bonding wire, and making an average crystal grain size in the cross-section of the core material in the direction perpendicular to the wire axis of the bonding wire 0.9 to 1.5 μm provides a strength ratio of 1.6 or less.


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