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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10403814 B1

PDFFull Text
Date of Patent:
Sep. 03, 2019

Filed:

May. 02, 2016

Method of cleaning and method of plasma processing

Applicant:

Tokyo Electron Limited, Tokyo, JP;

Inventors:

Takuya Kubo, Tokyo, JP;

Song yun Kang, Tokyo, JP;

Keiichi Shimoda, Beaverton, OR (US);

Tetsuya Ohishi, Miyagi, JP;

Assignee:

Tokyo Electron Limited, Tokyo, JP;

Attorney:

IPUSA, PLLC

Primary Examiner:

Brian Turner

Int. Cl.
CPC ...
B08B 5/00 (2006.01); C23F 1/02 (2006.01); H01J 37/32 (2006.01); C23F 1/08 (2006.01); H01L 43/12 (2006.01); G11C 11/16 (2006.01); H01F 10/32 (2006.01); H01F 41/34 (2006.01); H01L 21/67 (2006.01); H01L 21/66 (2006.01); H01L 27/22 (2006.01); H01L 43/02 (2006.01); G11B 5/84 (2006.01); H01L 21/683 (2006.01); H01L 43/10 (2006.01);
U.S. Cl.
CPC ...
H01L 43/12 (2013.01); G11B 5/8404 (2013.01); G11C 11/161 (2013.01); H01F 10/3259 (2013.01); H01F 41/34 (2013.01); H01J 37/32091 (2013.01); H01J 37/32724 (2013.01); H01J 37/32853 (2013.01); H01J 37/32963 (2013.01); H01L 21/67028 (2013.01); H01L 21/67069 (2013.01); H01L 21/67109 (2013.01); H01L 21/67253 (2013.01); H01L 21/6831 (2013.01); H01L 22/26 (2013.01); H01L 27/222 (2013.01); H01L 43/02 (2013.01); H01F 10/3272 (2013.01); H01J 37/32183 (2013.01); H01J 37/32449 (2013.01); H01J 2237/002 (2013.01); H01J 2237/24507 (2013.01); H01J 2237/327 (2013.01); H01J 2237/334 (2013.01); H01J 2237/335 (2013.01); H01L 21/6833 (2013.01); H01L 43/10 (2013.01);
Abstract

A method of cleaning a substrate processing apparatus that etches a film including a metal, the method include a first cleaning step of providing a gas containing a hydrogen-containing gas, and removing a carbon-containing deposition by plasma generated from the gas containing the hydrogen-containing gas; a second cleaning step of, after the first cleaning step, providing an inert gas, and removing a metal-containing deposition by plasma generated from the inert gas; and a third cleaning step of, after the second cleaning step, providing a gas containing a fluorine-containing gas and an oxygen-containing gas, and removing a silicon-containing deposition by plasma generated from the gas containing the fluorine-containing gas and the oxygen-containing gas.

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