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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10381319 B1

PDFFull Text
Date of Patent:
Aug. 13, 2019

Filed:

Dec. 06, 2017

Core material, semiconductor package, and forming method of bump electrode

Applicant:

Senju Metal Industry Co., Ltd., Tokyo, JP;

Inventors:

Tomoaki Nishino, Tokyo, JP;

Shigeki Kondo, Tochigi, JP;

Takahiro Hattori, Tochigi, JP;

Hiroyoshi Kawasaki, Tokyo, JP;

Takahiro Roppongi, Tochigi, JP;

Daisuke Soma, Tochigi, JP;

Isamu Sato, Saitama, JP;

Assignee:

Senju Metal Industry Co., Ltd., Tokyo, JP;

Attorney:

The Webb Law Firm

Primary Examiner:

Nitin Parekh

Int. Cl.
CPC ...
H01L 23/48 (2006.01); H01L 23/00 (2006.01); B23K 35/26 (2006.01); C22C 12/00 (2006.01); C22C 13/02 (2006.01); H05K 3/34 (2006.01); B23K 1/00 (2006.01); B23K 35/02 (2006.01); C25D 3/60 (2006.01); C25D 5/10 (2006.01); C25D 5/12 (2006.01); C25D 7/00 (2006.01); B23K 101/40 (2006.01); B22F 1/00 (2006.01); B22F 1/02 (2006.01); C22C 5/00 (2006.01); C22C 9/00 (2006.01);
U.S. Cl.
CPC ...
H01L 24/13 (2013.01); B23K 1/0016 (2013.01); B23K 35/0227 (2013.01); B23K 35/0244 (2013.01); B23K 35/26 (2013.01); B23K 35/262 (2013.01); B23K 35/264 (2013.01); C22C 12/00 (2013.01); C22C 13/02 (2013.01); C25D 3/60 (2013.01); C25D 5/10 (2013.01); C25D 5/12 (2013.01); C25D 7/00 (2013.01); H01L 24/11 (2013.01); H05K 3/34 (2013.01); B22F 1/0003 (2013.01); B22F 1/025 (2013.01); B22F 2999/00 (2013.01); B23K 2101/40 (2018.08); C22C 5/00 (2013.01); C22C 9/00 (2013.01); H01L 2224/11462 (2013.01); H01L 2224/11849 (2013.01); H01L 2224/1312 (2013.01); H01L 2224/1316 (2013.01); H01L 2224/1317 (2013.01); H01L 2224/1318 (2013.01); H01L 2224/13109 (2013.01); H01L 2224/13111 (2013.01); H01L 2224/13113 (2013.01); H01L 2224/13116 (2013.01); H01L 2224/13117 (2013.01); H01L 2224/13118 (2013.01); H01L 2224/13123 (2013.01); H01L 2224/13124 (2013.01); H01L 2224/13138 (2013.01); H01L 2224/13139 (2013.01); H01L 2224/13144 (2013.01); H01L 2224/13147 (2013.01); H01L 2224/13149 (2013.01); H01L 2224/13155 (2013.01); H01L 2224/13157 (2013.01); H01L 2224/13166 (2013.01); H01L 2224/13169 (2013.01); H01L 2224/13171 (2013.01); H01L 2224/13179 (2013.01); H01L 2224/13561 (2013.01); H01L 2224/13582 (2013.01); H01L 2224/13611 (2013.01); H01L 2224/13613 (2013.01); H01L 2224/13655 (2013.01); H01L 2224/13657 (2013.01); H01L 2924/014 (2013.01); H01L 2924/01014 (2013.01); H01L 2924/01032 (2013.01); H01L 2924/01057 (2013.01); H01L 2924/3841 (2013.01);
Abstract

A core material including a core and a solder plating layer of a (Sn—Bi)-based solder alloy made of Sn and Bi on a surface of the core. Bi in the solder plating layer is distributed in the solder plating layer at a concentration ratio in a predetermined range of, for example, 91.7% to 106.7%. Bi in the solder plating layer is homogeneous, and thus, a Bi concentration ratio is in a predetermined range over the entire solder plating layer including an inner circumference side and an outer circumference side in the solder plating layer.

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