The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 16, 2019
Filed:
May. 14, 2018
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Chen-Hua Yu, Hsinchu, TW;
Hsien-Wei Chen, Hsinchu, TW;
Meng-Tsan Lee, Hsinchu, TW;
Tsung-Shu Lin, New Taipei, TW;
Wei-Cheng Wu, Hsinchu, TW;
Chien-Chia Chiu, Zhongli, TW;
Chin-Te Wang, Taipei, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
A package includes a first dielectric layer, a device die over and attached to the first dielectric layer, an active through-via and a dummy through-via, and an encapsulating material encapsulating the device die, the active through-via, and the dummy through-via. The package further includes a second dielectric layer over and contacting the device die, the active through-via, and the dummy through-via. An active metal cap is over and contacting the second dielectric layer and electrically coupling to the active through-via. The active metal cap overlaps the active through-via. A dummy metal cap is over and contacting the second dielectric layer. The dummy metal cap overlaps the dummy through-via. The dummy metal cap is separated into a first portion and a second portion by a gap. A redistribution line passes through the gap between the first portion and the second portion of the dummy metal cap.