The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 09, 2019
Filed:
Apr. 06, 2016
Tokyo Electron Limited, Tokyo, JP;
Koji Maruyama, Miyagi, JP;
Akira Koshiishi, Miyagi, JP;
Toshio Haga, Miyagi, JP;
Masato Horiguchi, Miyagi, JP;
Makoto Kato, Miyagi, JP;
TOKYO ELECTRON LIMITED, Tokyo, JP;
Abstract
In a method of an embodiment, radicals, which are generated from a processing gas, is adsorbed to a layer to be etched without applying a high-frequency bias to a lower electrode, in an adsorption step. In the subsequent etching step, ions, which are generated from the processing gas, are drawn into the layer to be etched by applying a high-frequency bias to the lower electrode. The adsorption step and the etching step are alternately repeated. In the adsorption step, a density of radicals is 200 or greater times a density of ions. In the etching step, RF energy having a power density of 0.07 W/cmor less is supplied to the lower electrode or a high-frequency bias having a power density of 0.14 W/cmor less is supplied to the lower electrode for a period of 0.5 seconds or less.