The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 28, 2019
Filed:
Jun. 14, 2018
Lam Research Corporation, Fremont, CA (US);
Alexei Marakhtanov, Albany, CA (US);
Lin Zhao, Fremont, CA (US);
Felix Kozakevich, Sunnyvale, CA (US);
Kenneth Lucchesi, Newark, CA (US);
Zhigang Chen, Campbell, CA (US);
John Patrick Holland, San Jose, CA (US);
Lam Research Corporation, Fremont, CA (US);
Abstract
Systems and methods for providing a multi regime plasma wafer processing are described. The systems and methods have three states. During a first one of the states, an etching operation is performed. In a second one of the states, a power level of a kilohertz radio frequency signal is greater than zero to increase directionality of ions that are incident on a bottom surface of a stack layer. In a third one of the states, there is a reduction in a loss of mask on top of the stack layer and deposition may be performed.