The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 14, 2019
Filed:
Apr. 12, 2017
Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;
Shin-Puu Jeng, Hsinchu, TW;
Tzu-Jui Fang, Hsinchu, TW;
Hsi-Kuei Cheng, Hsinchu County, TW;
Chih-Kang Han, Hsin-Chu, TW;
Yi-Jen Lai, Hsinchu, TW;
Hsien-Wen Liu, Hsinchu, TW;
Yi-Jou Lin, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu, TW;
Abstract
A semiconductor device includes: a first dielectric layer having a first surface; a molding compound disposed on the first surface of the first dielectric layer; a second dielectric layer having a first surface disposed on the molding compound; a via disposed in the molding compound; and a first conductive bump disposed on the via and surrounded by the second dielectric layer; wherein the first dielectric layer and the second dielectric layer are composed of the same material. The filling material has a thickness between the second dielectric layer and the semiconductor die, and the diameter of the hole is inversely proportional to the thickness of the filling material.