The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 12, 2019

Filed:

Jun. 27, 2016
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;

Inventors:

Tung-Liang Shao, Hsin-Chu, TW;

Yi-Li Hsiao, Hsin-Chu, TW;

Hsiao-Yun Chen, Hsin-Chu, TW;

Chih-Hang Tung, Hsin-Chu, TW;

Chen-Hua Yu, Hsin-Chu, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/4763 (2006.01); H01L 23/48 (2006.01); H01L 23/52 (2006.01); H01L 25/00 (2006.01); H01L 21/56 (2006.01); H01L 21/78 (2006.01); H01L 23/498 (2006.01); H01L 23/00 (2006.01); H01L 25/065 (2006.01); H01L 25/03 (2006.01);
U.S. Cl.
CPC ...
H01L 25/50 (2013.01); H01L 21/565 (2013.01); H01L 21/78 (2013.01); H01L 23/49827 (2013.01); H01L 23/49838 (2013.01); H01L 24/09 (2013.01); H01L 24/11 (2013.01); H01L 24/17 (2013.01); H01L 24/81 (2013.01); H01L 25/0655 (2013.01); H01L 25/0657 (2013.01); H01L 25/03 (2013.01); H01L 2224/11464 (2013.01); H01L 2224/1316 (2013.01); H01L 2224/13111 (2013.01); H01L 2224/13116 (2013.01); H01L 2224/13139 (2013.01); H01L 2224/13144 (2013.01); H01L 2224/13147 (2013.01); H01L 2224/13155 (2013.01); H01L 2224/13157 (2013.01); H01L 2224/13164 (2013.01); H01L 2224/13173 (2013.01); H01L 2224/81007 (2013.01); H01L 2225/06513 (2013.01); H01L 2225/06548 (2013.01); H01L 2225/06568 (2013.01); H01L 2225/06593 (2013.01); H01L 2924/15311 (2013.01);
Abstract

Semiconductor devices and methods of manufacture thereof are disclosed. In some embodiments, a method of manufacturing a device includes coupling a first semiconductor device to a second semiconductor device by spacers. The first semiconductor device has first contact pads disposed thereon, and the second semiconductor device has second contact pads disposed thereon. The method includes forming an immersion interconnection between the first contact pads of the first semiconductor device and the second contact pads of the second semiconductor device.


Find Patent Forward Citations

Loading…