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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10197918 B1

PDFFull Text
Date of Patent:
Feb. 05, 2019

Filed:

Oct. 12, 2017

Photoresist topcoat compositions and methods of processing photoresist compositions

Applicant:

Rohm and Haas Electronic Materials Llc, Marlborough, MA (US);

Inventors:

Cong Liu, Shrewsbury, MA (US);

Doris H. Kang, Shrewsbury, MA (US);

Deyan Wang, Hudson, MA (US);

Cheng-Bai Xu, Southborough, MA (US);

Mingqi Li, Shrewsbury, MA (US);

Irvinder Kaur, Northborough, MA (US);

Assignee:

Rohm and Haas Electronic Materials LLC, Marlborough, MA (US);

Attorney:

Jonathan D. Baskin

Primary Examiner:

Amanda C Walke

Int. Cl.
CPC ...
G03F 7/11 (2006.01); G03F 7/09 (2006.01); G03F 7/038 (2006.01); B05C 11/08 (2006.01); G03F 7/00 (2006.01); G03F 7/16 (2006.01); H01L 21/027 (2006.01); G03F 7/40 (2006.01); G03F 7/38 (2006.01);
U.S. Cl.
CPC ...
G03F 7/11 (2013.01); B05C 11/08 (2013.01); G03F 7/0005 (2013.01); G03F 7/0387 (2013.01); G03F 7/09 (2013.01); G03F 7/162 (2013.01); G03F 7/38 (2013.01); G03F 7/40 (2013.01); H01L 21/0274 (2013.01);
Abstract

Photoresist topcoat compositions, comprising: a first polymer comprising a first repeat unit of general formula (I) and a second repeat unit of general formula (II): wherein: Rindependently represents H, F or optionally fluorinated C1 to C4 alkyl; Rrepresents optionally fluorinated linear, branched or cyclic C1 to C20 alkyl; Lrepresents a single bond or a multivalent linking group; and n is an integer of from 1 to 5; a second polymer comprising a first repeat unit of general formula (III) and a second repeat unit of general formula (IV): wherein: Rindependently represents H, F or optionally fluorinated C1 to C4 alkyl; Rrepresents linear, branched or cyclic C1 to C20 alkyl; Rrepresents linear, branched or cyclic C1 to C20 fluoroalkyl; Lrepresents a single bond or a multivalent linking group; and n is an integer of from 1 to 5; and a solvent. Coated substrates coated with the described topcoat compositions and methods of processing a photoresist composition are also provided. The invention finds particular applicability in the manufacture of semiconductor devices.

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