The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 25, 2018
Filed:
Nov. 18, 2013
Applicant:
Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;
Inventors:
Chang-Pin Huang, Taoyuan County, TW;
Tung-Liang Shao, Hsinchu, TW;
Hsien-Ming Tu, Hsinchu County, TW;
Ching-Jung Yang, Taoyuan County, TW;
Yu-Chia Lai, Miaoli County, TW;
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu, TW;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/00 (2006.01); H01L 21/56 (2006.01); H01L 23/31 (2006.01);
U.S. Cl.
CPC ...
H01L 24/05 (2013.01); H01L 24/04 (2013.01); H01L 24/11 (2013.01); H01L 24/13 (2013.01); H01L 24/73 (2013.01); H01L 21/563 (2013.01); H01L 23/3114 (2013.01); H01L 23/3157 (2013.01); H01L 24/03 (2013.01); H01L 24/06 (2013.01); H01L 2224/0345 (2013.01); H01L 2224/0346 (2013.01); H01L 2224/0348 (2013.01); H01L 2224/03452 (2013.01); H01L 2224/0401 (2013.01); H01L 2224/05008 (2013.01); H01L 2224/05009 (2013.01); H01L 2224/05022 (2013.01); H01L 2224/0558 (2013.01); H01L 2224/05111 (2013.01); H01L 2224/05124 (2013.01); H01L 2224/05139 (2013.01); H01L 2224/05144 (2013.01); H01L 2224/05147 (2013.01); H01L 2224/05555 (2013.01); H01L 2224/05559 (2013.01); H01L 2224/05569 (2013.01); H01L 2224/05572 (2013.01); H01L 2224/05573 (2013.01); H01L 2224/05611 (2013.01); H01L 2224/05616 (2013.01); H01L 2224/05624 (2013.01); H01L 2224/05639 (2013.01); H01L 2224/05644 (2013.01); H01L 2224/05647 (2013.01); H01L 2224/05655 (2013.01); H01L 2224/0615 (2013.01); H01L 2224/06051 (2013.01); H01L 2224/06154 (2013.01); H01L 2224/10126 (2013.01); H01L 2224/1134 (2013.01); H01L 2224/1191 (2013.01); H01L 2224/11334 (2013.01); H01L 2224/131 (2013.01); H01L 2224/13021 (2013.01); H01L 2224/13022 (2013.01); H01L 2224/13111 (2013.01); H01L 2224/13113 (2013.01); H01L 2224/13118 (2013.01); H01L 2224/13139 (2013.01); H01L 2224/13144 (2013.01); H01L 2224/13147 (2013.01); H01L 2224/73203 (2013.01); H01L 2924/01322 (2013.01); H01L 2924/12042 (2013.01); H01L 2924/3512 (2013.01);
Abstract
A semiconductor structure includes an oval-shaped pad and a dielectric layer. The oval-shaped pad is on a substrate and includes a major axis corresponding to the largest distance of the oval-shaped pad. The major axis is toward a geometric center of the substrate. The dielectric layer covers the substrate and surrounds the oval-shaped pad.