The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 25, 2018
Filed:
Dec. 15, 2015
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Hsiao-Ping Liu, Hsin-Chu, TW;
Hung-Chang Hsu, Kaohsiung, TW;
Hung-Wen Su, Hsinchu County, TW;
Ming-Hsing Tsai, Chu-Pei, TW;
Rueijer Lin, Hsinchu, TW;
Sheng-Hsuan Lin, Hsinchu County, TW;
Syun-Ming Jang, Hsin-Chu, TW;
Ya-Lien Lee, Hsinchu County, TW;
Yen-Shou Kao, Hsin-Chu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
A method of fabricating a semiconductor device is disclosed. The method includes forming a first gate stack over a substrate. The first gate stack includes a gate electrode, a first hard mask (HM) disposed over the gate electrode, and sidewall spacers along sidewalls of the first gate stack. The method also includes forming a first dielectric layer over the first gate stack, forming a second HM over the first HM and top surfaces of sidewall spacers, forming a second dielectric layer over the second HM and the first dielectric layer and removing the second and first dielectric layers to form a trench to expose a portion of the substrate while the second HM is disposed over the first gate stack.