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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10157863 B1

PDFFull Text
Date of Patent:
Dec. 18, 2018

Filed:

Nov. 06, 2017

Method for forming a lid structure for a semiconductor device package

Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Kuan-Lin Ho, Hsinchu, TW;

Chin-Liang Chen, Kaohsiung, TW;

Chi-Yang Yu, Zhongli, TW;

Yu-Chih Liu, Taipei, TW;

Assignee:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Attorney:

Slater Matsil, LLP

Primary Examiner:

Alonzo Chambliss

Int. Cl.
CPC ...
H01L 23/12 (2006.01); H01L 21/00 (2006.01); H05K 7/20 (2006.01); H01L 23/58 (2006.01); H01L 21/48 (2006.01); H01L 21/78 (2006.01); H01L 23/31 (2006.01); H01L 23/367 (2006.01); H01L 23/498 (2006.01); H01L 23/00 (2006.01); H01L 25/065 (2006.01);
U.S. Cl.
CPC ...
H01L 23/585 (2013.01); H01L 21/4853 (2013.01); H01L 21/78 (2013.01); H01L 23/3107 (2013.01); H01L 23/367 (2013.01); H01L 23/3675 (2013.01); H01L 23/49816 (2013.01); H01L 24/11 (2013.01); H01L 24/17 (2013.01); H01L 24/27 (2013.01); H01L 24/32 (2013.01); H01L 25/0655 (2013.01); H01L 25/0657 (2013.01); H01L 2224/0401 (2013.01); H01L 2224/16145 (2013.01); H01L 2224/16227 (2013.01); H01L 2224/32225 (2013.01); H01L 2224/32245 (2013.01); H01L 2224/73253 (2013.01); H01L 2224/81 (2013.01); H01L 2224/92225 (2013.01); H01L 2224/97 (2013.01); H01L 2225/06513 (2013.01); H01L 2924/15311 (2013.01); H01L 2924/15313 (2013.01);
Abstract

A semiconductor device structure and method for forming the same are provided. The semiconductor device structure includes a substrate and a die structure formed over the substrate. The semiconductor device structure also includes a lid structure formed over the die structure. The lid structure includes a top portion with a top length and a bottom portion with a bottom length, and the top length is greater than the bottom length. The semiconductor device structure also includes a package layer formed between the lid structure and the die structure, and a sidewall of the bottom portion of the lid structure is not aligned with a sidewall of the die structure.

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