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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10153278 B1

PDFFull Text
Date of Patent:
Dec. 11, 2018

Filed:

Sep. 28, 2017

Fin-type field effect transistor structure and manufacturing method thereof

Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Sheng-Lin Hsieh, New Taipei, TW;

I-Chih Chen, Tainan, TW;

Chih-Mu Huang, Tainan, TW;

Ching-Pin Lin, Hsinchu County, TW;

Ru-Shang Hsiao, Hsinchu County, TW;

Ting-Chun Kuan, Taichung, TW;

Assignee:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Attorney:

JCIPRNET

Primary Examiner:

Nathan W Ha

Int. Cl.
CPC ...
H01L 27/08 (2006.01); H01L 27/088 (2006.01); H01L 29/10 (2006.01); H01L 29/08 (2006.01); H01L 21/306 (2006.01); H01L 21/8234 (2006.01); H01L 21/762 (2006.01); H01L 29/66 (2006.01); H01L 21/02 (2006.01); H01L 21/311 (2006.01); H01L 29/06 (2006.01); H01L 29/167 (2006.01); H01L 21/308 (2006.01); H01L 29/78 (2006.01); H01L 29/165 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0886 (2013.01); H01L 21/02636 (2013.01); H01L 21/30604 (2013.01); H01L 21/31111 (2013.01); H01L 21/76224 (2013.01); H01L 21/823431 (2013.01); H01L 21/823437 (2013.01); H01L 21/823481 (2013.01); H01L 29/0649 (2013.01); H01L 29/0847 (2013.01); H01L 29/1037 (2013.01); H01L 29/6653 (2013.01); H01L 29/6656 (2013.01); H01L 21/02057 (2013.01); H01L 21/02532 (2013.01); H01L 21/02609 (2013.01); H01L 21/3081 (2013.01); H01L 21/3086 (2013.01); H01L 21/31116 (2013.01); H01L 29/165 (2013.01); H01L 29/167 (2013.01); H01L 29/7848 (2013.01);
Abstract

A fin-type field effect transistor comprising a substrate, at least one gate stack, spacers and epitaxy material portions is described. The substrate has fins and insulators located between the fins, and the fins comprise channel portions and flank portions beside the channel portions, the flank portions and the channel portions of the fins are protruded from the insulators, the flank portions of the fins and the channel portions of the fins have substantially a same height from top surfaces of the insulators, and each of the flank portions of the fins has a top surface and side surfaces adjoining the top surface. The at least one gate stack is disposed over the substrate, disposed on the insulators and over the channel portions of the fins. The spacers are disposed on the side surfaces of the flank portions of the fins. The epitaxy material portions are located above the top surfaces of the flank portions of the fins.

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