The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 04, 2018
Filed:
Mar. 18, 2016
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Chi-Cheng Hung, Tainan, TW;
Yu-Sheng Wang, Tainan, TW;
Weng-Cheng Chen, Tainan, TW;
Hao-Han Wei, New Taipei, TW;
Ming-Ching Chung, Tainan, TW;
Chi-Cherng Jeng, Tainan, TW;
Abstract
A method of fabricating tantalum nitride barrier layer in an ultra low threshold voltage semiconductor device is provided. The method includes forming a high-k dielectric layer over a semiconductor substrate. Subsequently, a tantalum nitride barrier layer is formed on the high-k dielectric layer. The tantalum nitride barrier layer has a Ta:N ratio between 1.2 and 3. Next, a plurality of first metal gates is formed on the tantalum nitride barrier layer. The first metal gates are patterned, and then a second metal gate is formed on the tantalum nitride barrier layer.