The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 20, 2018
Filed:
Feb. 19, 2016
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Chi-Ming Lu, Kaohsiung, TW;
Chih-Hui Huang, Tainan, TW;
Jung-Chih Tsao, Tainan, TW;
Yao-Hsiang Liang, Hsinchu, TW;
Chih-Chang Huang, Chiayi, TW;
Ching-Ho Hsu, Hsinchu, TW;
Taiwan Semiconductor Manufacturing Company Limited, Hsin-Chu, TW;
Abstract
A method of forming a deep trench isolation in a radiation sensing substrate includes: forming a trench in the radiation sensing substrate; forming a corrosion resistive layer in the trench, in which the corrosion resistive layer includes titanium carbon nitride having a chemical formula of TiCN, and x is in a range of 0.1 to 0.9; and filling a reflective material in the trench and over the corrosion resistive layer.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile