The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 20, 2018
Filed:
Oct. 05, 2017
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Chin-Han Meng, Hsinchu, TW;
Chih-Hsien Hsu, Hsinchu, TW;
Chia-Chi Chung, Hsinchu, TW;
Yu-Pei Chiang, Hsinchu, TW;
Wen-Chih Chen, Hsinchu, TW;
Chen-Huang Huang, Shuishang Township, Chiayi County, TW;
Zhi-Sheng Xu, Taichung, TW;
Jr-Sheng Chen, Hsinchu, TW;
Kuo-Chin Liu, Ji-an Township, Hualien County, TW;
Lin-Ching Huang, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Abstract
A method for forming a micro-electro-mechanical system (MEMS) device structure is provided. The method includes forming a second substrate over a first substrate, and a cavity is formed between the first substrate and the second substrate. The method includes forming a hole through the second substrate using an etching process, and the hole is connected to the cavity. The etching process includes a plurality of etching cycles, and each of the etching cycles includes an etching step, and the etching step has a first stage and a second stage. The etching time of each of the etching steps during the second stage is gradually increased as the number of etching cycles is increased.