The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 09, 2018
Filed:
Mar. 21, 2017
Intel Corporation, Santa Clara, CA (US);
Sansaptak Dasgupta, Hillsboro, OR (US);
Han Wui Then, Portland, OR (US);
Sanaz K. Gardner, Hillsboro, OR (US);
Seung Hoon Sung, Beaverton, OR (US);
Marko Radosavljevic, Beaverton, OR (US);
Benjamin Chu-Kung, Portland, OR (US);
Sherry Taft, Sherwood, OR (US);
Ravi Pillarisetty, Portland, OR (US);
Robert S. Chau, Beaverton, OR (US);
Intel Corporation, Santa Clara, CA (US);
Abstract
A trench comprising a portion of a substrate is formed. A nucleation layer is deposited on the portion of the substrate within the trench. A III-N material layer is deposited on the nucleation layer. The III-N material layer is laterally grown over the trench. A device layer is deposited on the laterally grown III-N material layer. A low defect density region is obtained on the laterally grown material and is used for electronic device fabrication of III-N materials on Si substrates.