The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 11, 2018
Filed:
Nov. 28, 2016
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Chih-Liang Chen, Hsinchu, TW;
Chih-Ming Lai, Hsinchu, TW;
Charles Chew-Yuen Young, Cupertino, CA (US);
Chin-Yuan Tseng, Hsinchu, TW;
Jiann-Tyng Tzeng, Hsinchu, TW;
Kam-Tou Sio, Zhubei, TW;
Ru-Gun Liu, Zhubei, TW;
Wei-Liang Lin, Hsinchu, TW;
L. C. Chou, Taipei, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
A method, of manufacturing fins for a semiconductor device which includes Fin-FETs, includes: forming a structure including a semiconductor substrate and capped semiconductor fins, the capped semiconductor fins being organized into at least first and second sets, with each member of the first set having a first cap with a first etch sensitivity, and each member of the second set having a second cap with a second etch, the second etch sensitivity being different than the first etch sensitivity; removing selected members of the first set and selected members of the second set from the structure.