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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10073349 B1

PDFFull Text
Date of Patent:
Sep. 11, 2018

Filed:

Aug. 19, 2016

Chemically amplified resist material, pattern-forming method, compound, and production method of compound

Applicants:

Osaka University, Suita-shi, JP;

Tokyo Electron Limited, Tokyo, JP;

Jsr Corporation, Tokyo, JP;

Inventors:

Hisashi Nakagawa, Tokyo, JP;

Takehiko Naruoka, Tokyo, JP;

Tomoki Nagai, Tokyo, JP;

Seiichi Tagawa, Suita, JP;

Akihiro Oshima, Suita, JP;

Seiji Nagahara, Tokyo, JP;

Assignees:

OSAKA UNIVERSITY, Suita-shi, JP;

TOKYO ELECTRON LIMITED, Tokyo, JP;

JSR CORPORATION, Tokyo, JP;

Attorney:

Oblon, McClelland, Maier & Neustadt, L.L.P.

Primary Examiner:

Amanda C Walke

Int. Cl.
CPC ...
G03F 7/004 (2006.01); G03F 7/20 (2006.01); C07C 381/12 (2006.01); C07C 309/07 (2006.01); C07C 303/32 (2006.01); C07D 409/14 (2006.01); C08F 220/26 (2006.01); C08F 220/28 (2006.01); C08F 220/38 (2006.01); C08F 220/14 (2006.01); C08F 220/22 (2006.01); C07D 317/72 (2006.01); C07D 335/16 (2006.01); C07D 493/10 (2006.01); G03F 7/039 (2006.01); G03F 7/32 (2006.01); G03F 7/38 (2006.01); C07C 43/164 (2006.01); C07C 45/51 (2006.01); C07C 45/59 (2006.01); C07D 317/22 (2006.01);
U.S. Cl.
CPC ...
G03F 7/203 (2013.01); C07C 43/164 (2013.01); C07C 45/515 (2013.01); C07C 45/59 (2013.01); C07C 303/32 (2013.01); C07C 309/07 (2013.01); C07C 381/12 (2013.01); C07D 317/22 (2013.01); C07D 317/72 (2013.01); C07D 335/16 (2013.01); C07D 409/14 (2013.01); C07D 493/10 (2013.01); C08F 220/14 (2013.01); C08F 220/22 (2013.01); C08F 220/26 (2013.01); C08F 220/28 (2013.01); C08F 220/38 (2013.01); G03F 7/0045 (2013.01); G03F 7/0392 (2013.01); G03F 7/2002 (2013.01); G03F 7/2022 (2013.01); G03F 7/322 (2013.01); G03F 7/38 (2013.01);
Abstract

A pattern-forming method comprises patternwise exposing a predetermined region of a resist material film made from a photosensitive resin composition comprising a chemically amplified resist material to a first radioactive ray that is ionizing radiation or nonionizing radiation having a wavelength of no greater than 400 nm. The resist material film patternwise exposed is floodwise exposed to a second radioactive ray that is nonionizing radiation having a wavelength greater than the wavelength of the nonionizing radiation for the patternwise exposing and greater than 200 nm. The chemically amplified resist material comprises a base component, and a generative component that is capable of generating a radiation-sensitive sensitizer and an acid upon an exposure. The generative component comprises a radiation-sensitive sensitizer generating agent. The radiation-sensitive sensitizer generating agent comprises a compound represented by formula (A).

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