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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10073348 B1

PDFFull Text
Date of Patent:
Sep. 11, 2018

Filed:

Aug. 19, 2016

Resist-pattern-forming method and chemically amplified resist material

Applicants:

Osaka University, Suita-shi, JP;

Tokyo Electron Limited, Tokyo, JP;

Jsr Corporation, Tokyo, JP;

Inventors:

Hisashi Nakagawa, Tokyo, JP;

Takehiko Naruoka, Tokyo, JP;

Tomoki Nagai, Tokyo, JP;

Seiichi Tagawa, Suita, JP;

Akihiro Oshima, Suita, JP;

Seiji Nagahara, Tokyo, JP;

Assignees:

OSAKA UNIVERSITY, Suita-shi, JP;

TOKYO ELECTRON LIMITED, Tokyo, JP;

JSR CORPORATION, Tokyo, JP;

Attorney:

Oblon, McClelland, Maier & Neustadt, L.L.P.

Primary Examiner:

Amanda C Walke

Int. Cl.
CPC ...
G03F 7/004 (2006.01); G03F 7/20 (2006.01); H01L 21/027 (2006.01); C07C 309/07 (2006.01); C07C 381/12 (2006.01); C08F 220/38 (2006.01); C07D 409/14 (2006.01); C07C 303/32 (2006.01); C08F 220/22 (2006.01); C08F 220/28 (2006.01); C08F 220/26 (2006.01); C08F 220/14 (2006.01); G03F 7/039 (2006.01); G03F 7/32 (2006.01); G03F 7/38 (2006.01);
U.S. Cl.
CPC ...
G03F 7/203 (2013.01); C07C 303/32 (2013.01); C07C 309/07 (2013.01); C07C 381/12 (2013.01); C07D 409/14 (2013.01); C08F 220/14 (2013.01); C08F 220/22 (2013.01); C08F 220/26 (2013.01); C08F 220/28 (2013.01); C08F 220/38 (2013.01); G03F 7/0045 (2013.01); G03F 7/0046 (2013.01); G03F 7/0397 (2013.01); G03F 7/2002 (2013.01); G03F 7/2022 (2013.01); G03F 7/322 (2013.01); G03F 7/38 (2013.01); H01L 21/0274 (2013.01);
Abstract

A resist-pattern-forming method comprises: patternwise exposing a predetermined region of a resist material film to a first radioactive ray that is ionizing radiation or nonionizing radiation; floodwise exposing the resist material film to a second radioactive ray that is nonionizing radiation; baking the resist material film; and developing the resist material film to form a resist pattern. The resist material film is made from a photosensitive resin composition comprising a chemically amplified resist material. The chemically amplified resist material comprises a base component that is capable of being made soluble or insoluble in a developer solution by an action of an acid and a generative component that is capable of generating a radiation-sensitive sensitizer and an acid upon an exposure. A van der Waals volume of the acid generated from the generative component is no less than 3.0×10m.

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