The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 14, 2018
Filed:
Jun. 01, 2016
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Hung-Chun Wang, Taichung, TW;
Ming-Hui Chih, Luzhou, TW;
Ping-Chieh Wu, Zhubei, TW;
Chun-Hung Wu, Hsinchu, TW;
Wen-Hao Liu, Zhubei, TW;
Cheng-Hsuan Huang, New Taipei, TW;
Cheng-Kun Tsai, Hsinchu, TW;
Wen-Chun Huang, Tainan, TW;
Ru-Gun Liu, Zhubei, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Abstract
The present disclosure relates to a method of improving pattern density with a low OPC (optical proximity correction) cycle time, and an associated apparatus. In some embodiments, the method is performed by performing an initial data preparation process on an IC design including a graphical representation of a layout used to fabricate an integrated chip. The initial data preparation process is performed by using a data preparation element to generate a modified IC design having modified shapes that are modified forms of shapes within the IC design. One or more low-pattern-density areas of the modified IC design are identified using a local density checking element. One or more dummy shapes are added within the one or more low-pattern-density areas using a dummy shape insertion element. The one or more dummy shapes are separated from the modified shapes by a non-zero space.