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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10032737 B1

PDFFull Text
Date of Patent:
Jul. 24, 2018

Filed:

Sep. 06, 2016

Semiconductor device and manufacturing method thereof

Applicant:

Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;

Inventors:

Tung-Liang Shao, Hsinchu, TW;

Yu-Chia Lai, Miaoli County, TW;

Hsien-Ming Tu, Hsinchu County, TW;

Chang-Pin Huang, Taoyuan County, TW;

Ching-Jung Yang, Taoyuan County, TW;

Assignee:

TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu, TW;

Attorneys:

WPAT, P.C., Intellectual Property Attorneys

Anthony King

Primary Examiner:

Fazli Erdem

Int. Cl.
CPC ...
H01L 21/268 (2006.01); H01L 23/00 (2006.01); H01L 21/78 (2006.01); H01L 21/56 (2006.01); H01L 23/31 (2006.01);
U.S. Cl.
CPC ...
H01L 24/11 (2013.01); H01L 21/268 (2013.01); H01L 21/561 (2013.01); H01L 21/78 (2013.01); H01L 23/3157 (2013.01); H01L 24/02 (2013.01); H01L 24/10 (2013.01); H01L 24/13 (2013.01); H01L 24/14 (2013.01); H01L 24/94 (2013.01); H01L 23/3114 (2013.01); H01L 23/3192 (2013.01); H01L 24/03 (2013.01); H01L 24/05 (2013.01); H01L 2224/02381 (2013.01); H01L 2224/0345 (2013.01); H01L 2224/0346 (2013.01); H01L 2224/03452 (2013.01); H01L 2224/0401 (2013.01); H01L 2224/05548 (2013.01); H01L 2224/05647 (2013.01); H01L 2224/05655 (2013.01); H01L 2224/05666 (2013.01); H01L 2224/10126 (2013.01); H01L 2224/10145 (2013.01); H01L 2224/11013 (2013.01); H01L 2224/1182 (2013.01); H01L 2224/11334 (2013.01); H01L 2224/13014 (2013.01); H01L 2224/13016 (2013.01); H01L 2224/13023 (2013.01); H01L 2224/13024 (2013.01); H01L 2224/13027 (2013.01); H01L 2224/13111 (2013.01); H01L 2224/94 (2013.01); H01L 2924/12042 (2013.01); H01L 2924/181 (2013.01); H01L 2924/3511 (2013.01);
Abstract

A semiconductor device includes a substrate includes a first layer and a second layer over the first layer, a bump disposed over the second layer, a molding disposed over the second layer and surrounding the bump, and a retainer disposed over the second layer, wherein the retainer is disposed between the molding and a periphery of the substrate. Further, a method of manufacturing a semiconductor device includes providing a substrate, disposing several bumps on the substrate, disposing a retainer on the substrate and surrounding the bumps, and disposing a molding between the bumps and the retainer.

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