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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10011741 B1

PDFFull Text
Date of Patent:
Jul. 03, 2018

Filed:

Mar. 02, 2016

Chemical mechanical polishing (cmp) composition for shallow trench isolation (sti) applications and methods of making thereof

Applicant:

Air Products and Chemicals, Inc., Allentown, PA (US);

Inventors:

Xiaobo Shi, Chandler, AZ (US);

John Edward Quincy Hughes, Cave Creek, AZ (US);

Hongjun Zhou, Chandler, AZ (US);

Daniel Hernandez Castillo, II, Laveen, AZ (US);

Jae Ouk Choo, Chandler, AZ (US);

James Allen Schlueter, Phoenix, AZ (US);

Jo-Ann Theresa Schwartz, Fountain Hills, AZ (US);

Laura Ledenbach, Gilbert, AZ (US);

Steven Charles Winchester, Phoenix, AZ (US);

Saifi Usmani, Phoenix, AZ (US);

John Anthony Marsella, Allentown, PA (US);

Martin Kamau Ngigi Mungai, Gilbert, AZ (US);

Assignee:

VERSUM MATERIALS US, LLC, Tempe, AZ (US);

Attorney:

Lina Yang

Primary Examiner:

Binh X Tran

Assistant Examiner:

David Cathey, Jr

Int. Cl.
CPC ...
H01L 21/461 (2006.01); C09G 1/02 (2006.01); C09K 3/14 (2006.01); H01L 21/3105 (2006.01); H01L 21/762 (2006.01); B24B 1/00 (2006.01); G09G 1/02 (2006.01); C01F 17/00 (2006.01);
U.S. Cl.
CPC ...
C09G 1/02 (2013.01); B24B 1/00 (2013.01); C01F 17/0043 (2013.01); C09K 3/1409 (2013.01); C09K 3/1463 (2013.01); G09G 1/02 (2013.01); H01L 21/31053 (2013.01); H01L 21/31055 (2013.01); H01L 21/76224 (2013.01); C01F 17/00 (2013.01); C01P 2004/52 (2013.01); C01P 2004/62 (2013.01);
Abstract

Methods for removing, reducing or treating the trace metal contaminants and the smaller fine sized cerium oxide particles from cerium oxide particles, cerium oxide slurry or chemical mechanical polishing (CMP) compositions for Shallow Trench Isolation (STI) process are applied. The treated chemical mechanical polishing (CMP) compositions, or the CMP polishing compositions prepared by using the treated cerium oxide particles or the treated cerium oxide slurry are used to polish substrate that contains at least a surface comprising silicon dioxide film for STI (Shallow trench isolation) processing and applications. The reduced nano-sized particle related defects have been observed due to the reduced trace metal ion contaminants and reduced very smaller fine cerium oxide particles in the Shallow Trench Isolation (STI) CMP polishing.

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