The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 26, 2018
Filed:
Nov. 03, 2016
Tokyo Electron Limited, Minato-ku, Tokyo, JP;
Kandabara N. Tapily, Mechanicville, NY (US);
Ying Trickett, Albany, NY (US);
Chihiro Tamura, Albany, NY (US);
Cory Wajda, Sand Lake, NY (US);
Gerrit J. Leusink, Rexford, NY (US);
Kaoru Maekawa, Albany, NY (US);
Tokyo Electron Limited, Tokyo, JP;
Abstract
Embodiments of the invention describe a method of corner rounding and trimming of nanowires used in semiconductor devices. According to one embodiment, the method includes providing in a process chamber a plurality of nanowires separated from each other by a void, where the plurality of nanowires have a height and at least substantially right angle corners, forming an oxidized surface layer on the plurality of nanowires using an oxidizing microwave plasma, removing the oxidized surface layer to trim the height and round the corners of the plurality of nanowires, and repeating the forming and removing at least once until the plurality of nanowires have a desired trimmed height and rounded corners.