Location History:
- Notre Dame, IN (US) (2016)
- Ithaca, NY (US) (2023 - 2024)
Company Filing History:
Years Active: 2016-2025
Title: Zongyang Hu: Innovator in Gallium Oxide Technology
Introduction
Zongyang Hu is a prominent inventor based in Notre Dame, Indiana, known for his contributions to the field of gallium oxide technology. He holds a total of 4 patents, showcasing his innovative approach to semiconductor devices. His work primarily focuses on enhancing the performance and efficiency of power electronic devices.
Latest Patents
Among his latest patents, Hu has developed a vertical gallium oxide (Ga2O3) power FET. This device features a substrate with an n-type Ga2O3 drift layer, an n-type semiconducting channel, and a higher doping concentration source layer. The design includes a first dielectric layer and a conductive gate layer, ensuring effective insulation and performance. Another significant patent involves high voltage gallium oxide trench MOS barrier Schottky structures, which are designed to operate at voltages greater than 1 kV while minimizing leakage. These innovations address the unique challenges associated with Group III trioxides.
Career Highlights
Zongyang Hu has had a distinguished career, working at esteemed institutions such as Cornell University and the University of Notre Dame. His research has significantly advanced the understanding and application of gallium oxide in power electronics, making him a key figure in this innovative field.
Collaborations
Throughout his career, Hu has collaborated with notable colleagues, including Debdeep Jena and Kazuki Nomoto. These partnerships have fostered a collaborative environment that enhances research and development in semiconductor technology.
Conclusion
Zongyang Hu's contributions to gallium oxide technology and his innovative patents position him as a leading inventor in the field. His work continues to influence advancements in power electronics, paving the way for more efficient and effective devices.