The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 07, 2016
Filed:
Aug. 27, 2014
Applicant:
University of Notre Dame Du Lac, Notre Dame, IN;
Inventors:
Huili (Grace) Xing, Notre Dame, IN (US);
Debdeep Jena, Notre Dame, IN (US);
Kazuki Nomoto, Notre Dame, IN (US);
Bo Song, Notre Dame, IN (US);
Mingda Zhu, Notre Dame, IN (US);
Zongyang Hu, Notre Dame, IN (US);
Assignee:
University of Notre Dame du Lac, Notre Dame, IN (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/778 (2006.01); H01L 29/20 (2006.01); H01L 29/201 (2006.01); H01L 29/205 (2006.01); H01L 29/06 (2006.01); H01L 29/10 (2006.01); H01L 29/808 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7787 (2013.01); H01L 29/0619 (2013.01); H01L 29/1095 (2013.01); H01L 29/201 (2013.01); H01L 29/2003 (2013.01); H01L 29/205 (2013.01); H01L 29/8083 (2013.01);
Abstract
A nitride-based field effect transistor (FET) comprises a compositionally graded and polarization induced doped p-layer underlying at least one gate contact and a compositionally graded and doped n-channel underlying a source contact. The n-channel is converted from the p-layer to the n-channel by ion implantation, a buffer underlies the doped p-layer and the n-channel, and a drain underlies the buffer.