The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 06, 2024
Filed:
Oct. 30, 2019
Applicant:
Cornell University, Ithaca, NY (US);
Inventors:
Wenshen Li, Ithaca, NY (US);
Zongyang Hu, Ithaca, NY (US);
Kazuki Nomoto, Ithaca, NY (US);
Debdeep Jena, Ithaca, NY (US);
Huili Grace Xing, Ithaca, NY (US);
Assignee:
Cornell University, Ithaca, NY (US);
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/872 (2006.01); H01L 29/24 (2006.01); H01L 29/36 (2006.01); H01L 29/40 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 29/8725 (2013.01); H01L 29/24 (2013.01); H01L 29/36 (2013.01); H01L 29/407 (2013.01); H01L 29/66969 (2013.01);
Abstract
Described herein are the design and fabrication of Group III trioxides, such as β-GaO, trench-MOS barrier Schottky (TMBS) structures with high voltage (>1 kV), low leakage capabilities, while addressing on the necessary methods to meet the requirements unique to Group III trioxides, such as β-GaO.