Ziqi Chen

Title: Innovations of Ziqi Chen in Three-Dimensional Memory Devices

Introduction

Ziqi Chen is a prominent inventor based in Hubei, China. He has made significant contributions to the field of memory devices, holding a total of six patents. His work focuses on the development of advanced three-dimensional memory technologies.

Latest Patents

Ziqi Chen's latest patents include innovative methods and structures for three-dimensional memory devices. One of his notable patents describes a method for forming a memory device that involves creating a plurality of first semiconductor channels over a first wafer. These channels extend perpendicularly to the wafer's surface, accompanied by first via structures. Additionally, he has developed a method for forming a recess region in a substrate, which includes multiple protruding islands. This method also involves creating a gate dielectric layer and an alternating dielectric stack, ultimately leading to the formation of a memory layer in each channel hole.

Career Highlights

Ziqi Chen is currently employed at Yangtze Memory Technologies Co., Ltd. His work at this company has positioned him as a key player in the advancement of memory technology. His innovative approaches have garnered attention in the industry, contributing to the evolution of three-dimensional memory devices.

Collaborations

Ziqi Chen collaborates with talented individuals in his field, including Guanping Wu and Chao Li. These collaborations enhance the research and development efforts within the company, fostering an environment of innovation.

Conclusion

Ziqi Chen's contributions to the field of three-dimensional memory devices are noteworthy. His patents reflect a commitment to advancing technology and improving memory device fabrication methods. His work continues to influence the industry and pave the way for future innovations.