Hubei, China

Zilong Chen


 

Average Co-Inventor Count = 2.3

ph-index = 1

Forward Citations = 2(Granted Patents)


Location History:

  • Wuhan, CN (2022)
  • Hubei, CN (2021 - 2023)

Company Filing History:


Years Active: 2021-2025

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4 patents (USPTO):Explore Patents

Title: Zilong Chen: Innovator in Three-Dimensional Flash Memory Technology

Introduction

Zilong Chen is a prominent inventor based in Hubei, China. He has made significant contributions to the field of memory technology, particularly in three-dimensional (3D) flash memory. With a total of 4 patents to his name, Chen is recognized for his innovative approaches to enhancing memory device performance.

Latest Patents

One of Zilong Chen's latest patents is a method for reading three-dimensional flash memory. This method involves conducting a read-verification operation on a target memory cell in a 3D memory device. The process includes removing fast charges of the target memory cell during a read-prepare step and measuring the threshold voltage of the target memory cell at a sensing step. The removal of fast charges involves applying a prepare voltage on an unselected top select gate of an unselected memory string, a first off voltage on a selected word line associated with the target memory cell, and a pass voltage on an unselected word line.

Career Highlights

Zilong Chen is currently employed at Yangtze Memory Technologies Co., Ltd. His work at this company has positioned him as a key player in the development of advanced memory technologies. His innovative methods have the potential to significantly improve the efficiency and reliability of 3D memory devices.

Collaborations

Zilong Chen collaborates with talented coworkers, including Xiang Fu and Ke Jiang. Together, they contribute to the advancement of memory technology through their combined expertise and innovative ideas.

Conclusion

Zilong Chen's work in three-dimensional flash memory technology showcases his dedication to innovation and excellence. His patents reflect a deep understanding of memory systems and a commitment to improving their functionality. As he continues to develop new methods, his contributions will undoubtedly shape the future of memory technology.

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