The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 22, 2021
Filed:
Dec. 30, 2019
Yangtze Memory Technologies Co., Ltd., Hubei, CN;
Zilong Chen, Hubei, CN;
Xiang Fu, Hubei, CN;
Yangtze Memory Technologies Co., Ltd., Hubei, CN;
Abstract
A method for conducting a read-verification operation on a target memory cell in a three-dimensional (3D) memory device includes removing fast charges of the target memory cell at a read-prepare step and measuring a threshold voltage of the target memory cell at a sensing step. Removing the fast charges of the target memory cell includes applying a prepare voltage (V) on an unselected top select gate (Unsel_TSG) of an unselected memory string, applying a first off voltage (V) on a selected word line (Sel_WL) associated with the target memory cell, and applying a pass voltage (V) on an unselected word line (Unsel_WL).