Zhouyang Lu

Title: Zhouyang Lu: Innovator in 3D Memory Technology

Introduction

Zhouyang Lu is a prominent inventor based in Wuhan, China. He has made significant contributions to the field of memory technology, particularly in the development of three-dimensional (3D) NAND memory devices. His innovative work has the potential to enhance data storage capabilities in various applications.

Latest Patents

Zhouyang Lu holds a patent for a three-dimensional (3D) memory device and its fabrication method. This patent outlines a fabrication method that includes forming a semiconductor layer over a substrate, creating an opening that extends partially through the semiconductor layer, and depositing a first and second stack layer that are alternately stacked over the sidewall of the opening and over the semiconductor layer. The process concludes with filling the opening with a dielectric material to form an alignment mark. This invention represents a significant advancement in memory device technology.

Career Highlights

Zhouyang Lu is currently employed at Yangtze Memory Technologies Co., Ltd., where he continues to push the boundaries of memory technology. His work at this leading company has positioned him as a key player in the industry, contributing to the development of cutting-edge memory solutions.

Collaborations

Zhouyang Lu collaborates with talented individuals in his field, including Chuanhai Shan and Zhaosong Li. These partnerships foster innovation and drive advancements in memory technology.

Conclusion

Zhouyang Lu's contributions to the field of 3D memory technology are noteworthy. His patent for a 3D NAND memory device showcases his innovative spirit and commitment to advancing technology. His work at Yangtze Memory Technologies Co., Ltd. and collaborations with esteemed colleagues further highlight his impact in the industry.