Wuhan, China

Zhongyi Xia

This inventor holds 6 USPTO granted patents and 1 published patent application. Top assignee: Yangtze Memory Technologies Co., Ltd.. Active years: 2021-2025.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Zhongyi Xia. Retrieved from https://idiyas.com/inventor/zhongyi-xia-qy5veput

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 6 

% Patents Active = 100.0

Average Co-Inventor Count = 3.6

ph-index = 2

Forward Citations = 4(Granted Patents)


Company Filing History:


Years Active: 2021-2025

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6 patents (USPTO):Explore Patents

Title: Innovations of Zhongyi Xia in 3D Memory Devices

Introduction

Zhongyi Xia is a prominent inventor based in Wuhan, China, known for his significant contributions to the field of memory technology. With a total of 6 patents to his name, he has been instrumental in advancing the design and fabrication of three-dimensional (3D) memory devices.

Latest Patents

Among his latest patents, Zhongyi Xia has developed a bonded memory device and fabrication methods thereof. This invention discloses embodiments of 3D memory devices formed by bonded semiconductor devices. The method includes forming an insulating material layer over a substrate, which does not necessarily require single-crystalline silicon. The insulating material layer is patterned to create an isolation structure and multiple trenches. A semiconductor material is then deposited to fill these trenches, forming array-base regions insulated from one another. Additionally, a plurality of memory arrays is formed over these regions, covered by an insulating structure.

Another notable patent is the computation-in-memory in a three-dimensional memory device. This invention features a 3D memory device that includes a first semiconductor structure with a peripheral circuit and a data processing circuit, stacked vertically on different planes. It also comprises a second semiconductor structure with an array of 3D NAND memory strings, along with bonding layers that facilitate connections between the structures.

Career Highlights

Zhongyi Xia is currently employed at Yangtze Memory Technologies Co., Ltd., where he continues to innovate in the field of memory technology. His work has significantly impacted the development of advanced memory solutions, enhancing performance and efficiency in data storage.

Collaborations

Zhongyi has collaborated with notable colleagues such as Shengwei Yang and Kun Han, contributing to various projects that push the boundaries of memory technology.

Conclusion

Zhongyi Xia's innovative work in 3D memory devices showcases his expertise and commitment to advancing technology in this critical field. His patents reflect a deep understanding of semiconductor fabrication and memory architecture, positioning him as a key figure in the industry.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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