Wuhan, China

Zhong Lv

This inventor holds 1 USPTO granted patent and 4 published patent applications. Top assignee: Yangtze Memory Technologies., Ltd.. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Zhong Lv. Retrieved from https://idiyas.com/inventor/zhong-lv-7nafeazg

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 1 

Average Co-Inventor Count = 1.0

ph-index = 1


Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: Innovations of Zhong Lv in Semiconductor Technology

Introduction

Zhong Lv is a prominent inventor based in Wuhan, China. He has made significant contributions to the field of semiconductor technology. His innovative work has led to the development of a unique semiconductor structure that enhances memory capabilities.

Latest Patents

Zhong Lv holds 1 patent for his invention titled "Semiconductor structure, dicing method thereof, and memory." This patent describes a semiconductor structure that includes a first wafer with multiple peripheral circuit chips and a dicing lane. The design features a first mark at the edge of the wafer, which aligns with the dicing lane, ensuring precision in the manufacturing process. Additionally, the structure incorporates a second wafer containing memory array chips, stacked with the first wafer, to optimize memory performance.

Career Highlights

Zhong Lv is currently employed at Yangtze Memory Technologies, Ltd. His role at the company allows him to work on cutting-edge semiconductor technologies. His expertise in this area has positioned him as a valuable asset to the organization.

Collaborations

Zhong has collaborated with notable colleagues, including Dongyu Fan and Tingting Gao. Their combined efforts contribute to the advancement of semiconductor innovations within their organization.

Conclusion

Zhong Lv's contributions to semiconductor technology exemplify the importance of innovation in enhancing memory structures. His work continues to influence the field and drive advancements in technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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