This inventor holds 1 USPTO granted patent. Top assignee: Shanghai Huali Integrated Circuit Corporation. Active years: 2026.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 2026
Title: Zhiqi Yuan and Semiconductor Contact-Filling Innovation.
Introduction
Zhiqi Yuan is an inventor associated with Shanghai, China, and Shanghai Huali Integrated Circuit Corporation. His work includes a semiconductor fabrication technique for forming contacts in integrated circuits.
Latest Patents
The provided information lists one patent for Yuan: “Contact Filling Method.” The method forms two contacts by selectively removing oxide and silicon nitride layers to expose either a titanium nitride (TiN) layer or a cobalt (Co) layer. It then forms a selective Co layer at the bottom of each contact and fills both contacts with tungsten. This process describes a way to create contacts with different underlying materials within the same fabrication structure.
Career Highlights
Yuan’s listed patent reflects work in semiconductor manufacturing, particularly contact formation and material integration. The supplied data attributes 1 patent to him.
Collaborations
Yuan is associated with Shanghai Huali Integrated Circuit Corporation. His listed coworker is Jiazhang Xu, who is a woman.
Conclusion
Zhiqi Yuan’s “Contact Filling Method” addresses contact formation in semiconductor fabrication through selective layer removal, cobalt deposition, and tungsten filling.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile