This inventor holds 1 USPTO granted patent. Top assignee: Intel Corporation. Active years: 2026.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 2026
Title: Zhiguo Sun: Inventor of a Bilayer Memory-Cell Encapsulation
Introduction
Zhiguo Sun is an inventor associated with Albuquerque, New Mexico, and Intel Corporation. His patent work concerns memory-device design, specifically the encapsulation of a memory cell.
Latest Patents
Sun is credited with 1 patent, titled “Bilayer Encapsulation of a Memory Cell.” The invention describes a memory device with a storage element that includes phase-change memory. A bilayer is formed on two sides of the memory cell, with an inner layer made of a first nitride and an outer layer made of a second nitride.
Career Highlights
Sun’s listed patent connects his work with Intel Corporation and addresses the structure of memory-cell encapsulation. The patent describes a layered approach using two nitride materials.
Collaborations
Sun’s listed coworkers include Errol Todd Ryan and Kyuchul Chong.
Conclusion
Zhiguo Sun’s patent record highlights his contribution to memory-device technology through a bilayer encapsulation design for a phase-change memory cell.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile