The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 27, 2026
Filed:
May. 20, 2022
Applicant:
Intel Corporation, Santa Clara, CA (US);
Inventors:
Errol Todd Ryan, Albuquerque, NM (US);
Kyuchul Chong, Rio Rancho, NM (US);
David M. Fryauf, Rio Rancho, NM (US);
Zhiguo Sun, Albuquerque, NM (US);
Assignee:
Intel Corporation, Santa Clara, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10N 70/00 (2023.01); H10B 63/00 (2023.01);
U.S. Cl.
CPC ...
H10N 70/801 (2023.02); H10B 63/84 (2023.02); H10N 70/011 (2023.02);
Abstract
A memory device comprising a memory cell comprising a storage element including a phase change memory; and a bilayer formed on a first side and a second side of the memory cell, the bilayer including an inner layer comprising a first nitride and an outer layer comprising a second nitride.
Quick Actions:
Ryan, Errol. (2026). Bilayer encapsulation of a memory cell (U.S. Patent No. 12777851). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12777851
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile